pin diodes for rf switching and attenuating technical data features ? low harmonic distortion ? large dynamic range ? low series resistance ? low capacitance description/applications these general purpose switching diodes are intended for low power switching applications such as rf duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. the 5082-3188 is optimized for vhf/uhf bandswitching. 1n5719, 1n5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 the rf resistance of a pin diode is a function of the current flowing in the diode. these current controlled resistors are specified for use in control applications such as variable rf attenuators, automatic gain control circuits, rf modulators, electrically tuned filters, analog phase shifters, and rf limiters. outline 15 diodes are available on tape and reel. the tape and reel specification is patterned after rs-296-d. 0.41 (.016) 0.36 (.014) 25.4 (1.00) min. 25.4 (1.00) min. 1.93 (.076) 1.73 (.068) cathode dimensions in millimeters and (inches). 4.32 (.170) 3.81 (.150) outline 15 maximum ratings junction operating and storage temperature range ................................................ -65 c to +150 c power dissipation 25 c ..................................................................... 250 mw (derate linearly to zero at 150 c) peak inverse voltage (piv) ........................................................ same as v br maximum soldering temperature ....................................... 260 c for 5 sec .com .com .com .com 4 .com u datasheet
2 mechanical specifications the agilent outline 15 package has a glass hermetic seal with dumet leads. the lead finish is 95- 5 tin-lead (snpb) for all pin diodes. the leads on the outline 15 package should be restricted so that the bend starts at least 1/ 16 inch (1.6 mm) from the glass body. typical package inductance and capacitance are 2.5 nh and 0.13 pf, respectively. marking is by digital coding with a cathode band. general purpose diodes electrical specifications at t a = 25 c maximum minimum maximum part total breakdown residual series effective carrier reverse recovery number capacitance voltage resistance lifetime time 5082- c t (pf) v br (v) r s ( w ) t (ns) t rr (ns) general purpose switching and attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1n5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) band switching 3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.) test v r = 50 v v r = v br i f =100 ma i f = 50 ma i f = 20 ma conditions *v r = 20 v measure *i f = 20 ma i r = 250 ma v r = 10 v **v r = 100 v i r 10 m a **i f = 10 ma *i f = 10 ma 90% recovery f = 1 mhz f = 100 mhz *i r = 6 ma notes: typical cw power switching capability for a shunt switch in a 50 w system is 2.5 w. rf current controlled resistor diodes electrical specifications at t a = 25 c max. max. high low difference effective min. residual max. resistance resistance in carrier breakdown series total limit, r h (w) limit, r l (w) resistance part lifetime voltage resistance capacitance vs. bias number t (ns) v br (v) r s ( w )c t (pf) min. max. min. max. slope, dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1n5767* 1300 (typ.) 100 2.5 0.4 1000 8** 5082-3379 1300 (typ.) 50 0.4 8** 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8** test i f = 50 ma v r = v br ,i f = 100 ma v r = 50 v i f = 0.01 ma i f = 1.0 ma batch conditions i r = 250 ma measure f = 100 mhz f = 1 mhz f = 100 mhz i f = 20 ma** matched at i r 10 m a f = 100 mhz i f = 0.01 ma and 1.0 ma f = 100 mhz *the 1n5767 has the additional specifications: t = 1.0 msec minimum i r = 1 m a maximum at v r = 50 v v f = 1 v maximum at i f = 100 ma. .com .com .com .com .com 4 .com u datasheet
3 typical parameters at t a = 25 c (unless otherwise noted) i f ?forward bias current (ma) figure 2. typical rf resistance vs. forward bias current. 10,000 1000 100 10 1 0.1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3001 5082-3039 5082-3077 in5719 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 i f ?forward current (ma) v f ?forward voltage (v) figure 1. forward current vs. forward voltage. 5082-3001, 3039, 3077, 3080 in5719 125 c 25 c ?0 c figure 3. typical rf resistance vs. forward bias current. i f ?forward bias current (ma) 100,000 10,000 1000 100 10 1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3080 5082-3379 5082-3081 reverse voltage (v) figure 4. typical capacitance vs. reverse voltage. 1.0 .5 0 capacitance (pf) 01020 30 40 50 60 70 figure 5. typical capacitance vs. reverse voltage. 5082-3001 3039 3077 in5719 5082-3039 in5719 5082-3001 reverse voltage (v) 2.5 .5 1.0 1.5 2.0 0 capacitance (pf) 01020 30 40 50 60 70 5082-3080 5082-3081 5082-3379 5082-3188 figure 7. typical second order intermodulation distortion. frequency (mhz) 0 80 60 40 20 100 below first order (db) 01020 30 40 50 60 80 70 10 db bridged tee attenuator 40 db mv output levels one input frequency fixed 100 mhz 5082-3081 figure 6. typical reverse recovery time vs. forward current for various reverse driving voltages. forward current (ma) reverse recovery time (ns) 0102030 v r = 5 v v r = 10 v v r = 20 v 1000 100 10 5082-3080 5082-3379 figure 8. typical cross intermodulation distortion. modulated frequency (mhz) 10 70 60 50 40 30 20 80 below first order (db) 01020 30 40 50 60 80 70 pin diode cross modulation 10 db bridged tee attenuator unmodulated frequency 100 mhz 100% modulation 15 khz 40 db mv output levels 5082-3081 5082-3080 5082-3379 .com .com .com .com .com 4 .com u datasheet
www.semiconductor.agilent.com data subject to change. copyright ? 2000 agilent technologies obsoletes 5967-5812e 5968-7182e (1/00) diode package marking 1n5xxx 5082-xxxx would be marked: 1nx xx xxx xx yww yww where xxxx are the last four digits of the 1nxxxx or the 5082-xxxx part number. y is the last digit of the calendar year. ww is the work week of manufacture. examples of diodes manufactured during workweek 45 of 1999: 1n5712 5082-3080 would be marked: 1n5 30 712 80 945 945 .com .com .com .com 4 .com u datasheet
|
